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| 1 "s f' r
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h j ' 1u n?+ $ n-channel mosfet y"n?+ $ $m/t yl$@ ?
?y"?4#"t ? 1 ?>+,]c? 1 r ; l d q j d q 5 r d g 7 ( ' $ 7 l d q m l q & k l q d $ ' '? 7 l d q m l q 0 l f u r ( o h f w u r q l f 0 d w h u l d o 7 h f k q r o r j \ & r / w g 7 ( /? ) $ ;? m2n60v/r/s/b/c/f ?u ? d main c haracteristics , ' $ 9 ' 6 6 9 5 g v r q ? # 9 j v 9 ? 4 j q & * e p?ne?g+ $d + $k# < ups + $d applications high ef ficie ncy switch mode power supplies electronic la mp ballast s based on hal f bridge ups { ? (m ? " u+ 9k " c rss ( l _ 7.6pf) ?gez? fea tures low gate charge low c rss (typical 7.6pf ) fast switchin g { ? 1 "sf' r _ h j'1u n?+ $ n-channel mosfet y"n?+ $ $m/t yl$@ ? ?y"?4#"t ? 1 ?>+,]c? 1 r ; l d q j d q 5 r d g 7 ( ' $ 7 l d q m l q & k l q d $ ' '? 7 l d q m l q 0 l f u r ( o h f w u r q l f 0 d w h u l d o 7 h f k q r o r j \ & r / w g 7 ( /? ) $ ;? 4 ? ? nq n absolute ratings (t c=25 ) d value nm ,a parameter 0 ? s y mbol jcs2n60v/r jcs2n60s/b/c jcs2n60f ) ! unit ?p?$? u$d u,#+ _ drain-sourc e v o lt age v dss 600 v 1.9 2.0 2.0* a e24$? u+ # drain current-continuous i d t=25 t=100 1.1 1.3 1.3* a ??6y?$? u+ # ?"? 1 ? drain current C pulse ? note 1 ? i dm 6.0 6.0* a ?p? $d+ _ gate-source voltage v gss 30 v )6y?l?y6?g ?"? 2 ? single pulsed a v alanche energy ? not e 2 ? e as 120 mj l?y+ # ?"? 1 ? a v alanche current ? note 1 ? i ar 1.8 2.0 2.0 a g?l?y6?g ?"? 1 ? repetitive a v alanche current ? note 1 ? e ar 4.4 5.4 5.4 mj ` u1u ? ?6 ??+ _ ? e)[ ?"? 3 ? peak diode recovery dv/d t ? note 3 ? dv/d t 5.5 v/ns 44 54 23 w 5?7s)[ power dissipation p d t c =25 -derate above 25 0.35 0.43 0.18 w/ ?p?4#y ?,|#yz operating and storage t e mperature range t j t stg -55 +150 4? ?p?&ty#yz maximum lead temperature for soldering purposes t l 300 * $? u+ #+ ?p?4#yl$ *drain current limited by maximum junction temperature 1 "sf' r _ h j'1u n?+ $ n-channel mosfet y"n?+ $ $m/t yl$@ ? ?y"?4#"t ? 1 ?>+,]c? 1 r ; l d q j d q 5 r d g 7 ( ' $ 7 l d q m l q & k l q d $ ' '? 7 l d q m l q 0 l f u r ( o h f w u r q l f 0 d w h u l d o 7 h f k q r o r j \ & r / w g 7 ( /? ) $ ;? + (m ? electrical characteristics nm ,a parameter 0 ? symbol # a? 5 tests conditions ? ? min l _ ty p ? ? max ) ! units g ? (m ? off ?character istics $?$d?0s+ _ drain-sourc e v o lt age bv dss i d =250 a, v gs =0v 600 - - v ?0s+ _#yz(m? breakdown voltage t e mperature coef ficient bv dss /t j i d =1ma, referenced to 25 - 0.65 - v/ v ds =600v ,v gs =0v , t c =25 - - 10 a l _?$? u$?+ # zero gate voltage drain current i dss v ds =480v , t c =125 - - 100 a !7 ? u'$?+ # gate-body leakage current, forward i gssf v ds =0v , v gs =30v - - 100 na ? ? u'$?+ # gate-body leakage current, reverse i gssr v ds =0v , v gs =-30v - - -100 na e? ? (m ? on-characteristics k+ _ gate threshold v o lt age v gs(th) v ds = v gs , i d =250 a 2.0 - 4.0 v m-?ee?+ l static drain-source on-resist ance r ds(on) v gs =10v , i d =1a - 3.8 5.0 !7 ?c?e forward t r ansconduct ance g fs v ds = 40v , i d =1.0a ? note 4 ? - 2.05 - s | ? (m ? dynamic characteristics eg9+ ? input cap acit ance c iss - 380 490 pf eg?+ ? output capacitance c oss - 35 46 pf ? ??eg+ ? reverse transfer cap acit a nce c rss v ds =25v , v gs =0v, f=1.0mh z - 7.6 9.9 pf 1 "sf' r _ h j'1u n?+ $ n-channel mosfet y"n?+ $ $m/t yl$@ ? ?y"?4#"t ? 1 ?>+,]c? 1 r ; l d q j d q 5 r d g 7 ( ' $ 7 l d q m l q & k l q d $ ' '? 7 l d q m l q 0 l f u r ( o h f w u r q l f 0 d w h u l d o 7 h f k q r o r j \ & r / w g 7 ( /? ) $ ;? + (m ? electrical characteristics ? g (m ? s w itching characteristics e3k t u rn-on del ay time t d (on) - 16 40 ns t k t u rn-on rise time t r - 50 1 1 0 n s e3k t u rn-off delay time t d (of f) - 40 90 ns ?l!k t u rn-of f fall time t f v dd =300v ,i d =2.0a,r g =25 ? note 4 5 ? - 40 90 ns u+ 9kg t o t a l gate charge q g - 15.3 19 nc $d+ 9k gate-source charge q gs - 1.8 - nc $?+ 9k gate-drain charge q gd v ds =480v , i d =2.0a v gs =10v ? note 4 5 ? - 7.2 - nc $?$d` u1u(m? ? ??nqn drain-source diode characteristics and maximum ratings !7 ? ??e24+ # maximum continuous drain -source diode forward current i s - - 2.0 a !7 ? ??6y?+ # maximum pulsed drain-s ource diode forward current i sm - - 6.0 a !7 ? _l! drain-sourc e diode forward v o lt age v sd v gs =0v , i s =2.0a - - 1.4 v ? ?6k reverse recovery time t rr - 250 - ns ? ?6+ 9k reverse recovery charge q rr v gs =0v , i s =2.0a di f /d t=100a/ s (note 4) - 1.31 - c & (m ? thermal characteristic ? ? max nm ,a parameter 0 ? s y mbol jcs2n60v/r jcs2n60s/b/c jcs2n60f ) ! unit 41u?,x&l thermal res ist ance, junction to case r th(j-c) 2.87 2.32 5.5 /w 4)?w,x&l thermal resistance, junction to ambient r th(j-a) 1 10 62.5 62.5 /w notes: 1 ? puls e w i d t h limited by maximum juncti on temperatur e "?g?? 1 ?6y??z+ ?p?4#yl$ 2 ? l=55mh, i as =2.0a, v dd =50v , r g =25 , ck?4 #y t j =2 5 3 ? i sd 2a,di/ d t 300a/s,v ddbv dss , ck ?4#y t j =2 5 4 ?6y?# a??6y??z 30 0 s , 40n! 2 5 ? ? a10#yzg 2 ? l=55mh, i as =2.0a, v dd =50v , r g =25 ,s t arting t j =2 5 3 ? i sd 2a,di/d t 300a/s,vddbv dss , s t arti ng t j =2 5 4 ? puls e t e st ? pulse wid t h 300s,dut y cy cle 2 5 ? essenti all y ind epe nd ent of operati ng tem peratur e 1 "sf' r _ h j'1u n?+ $ n-channel mosfet y"n?+ $ $m/t yl$@ ? ?y"?4#"t ? 1 ?>+,]c? 1 r ; l d q j d q 5 r d g 7 ( ' $ 7 l d q m l q & k l q d $ ' '? 7 l d q m l q 0 l f u r ( o h f w u r q l f 0 d w h u l d o 7 h f k q r o r j \ & r / w g 7 ( /? ) $ ;? (m u ? 4? electrical characteristics (curves) 11 0 0.1 1 v gs top 15v 1 0 v 8 v 7 v 6 .5 v 6 v 5 .5 v bottom 5v notes ? 1. 25 0 s pulse test 2. t c =25 i d [a] v ds [v] 24 68 0.1 1 10 no tes ? 1.250 s pu l s e t e st 2.v ds =40v 25 i d [a] v gs [v] 15 0 transfer characteristics on-resistance variation vs. on-region characteristics drain current and gate volta g e 0.5 1 . 0 1.5 2.0 2.5 3 . 0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 no te ? t j =25 v gs =10v v gs =20v r ds(on) [ ] i d [a] 0.1 1 0.5 0. 6 0. 7 0. 8 0. 9 1. 0 1. 1 1. 2 1. 3 notes ? 1. 250 s pul s e t e st 2. v gs =0v 150 25 v sd [v] i dr [a] body diode forw ard voltage variation vs. source current and tem p erature capacitance characteristics gate charge characteristics 0 2 4 6 8 10 12 02 46 810 1 2 1 4 1 6 1 8 v ds =480v v ds =300v v ds = 120v q g t o l t a l gat e charge [ n c] v gs g a t e s our ce v o lt ag e[ v ] 1 "sf' r _ h j'1u n?+ $ n-channel mosfet y"n?+ $ $m/t yl$@ ? ?y"?4#"t ? 1 ?>+,]c? 1 r ; l d q j d q 5 r d g 7 ( ' $ 7 l d q m l q & k l q d $ ' '? 7 l d q m l q 0 l f u r ( o h f w u r q l f 0 d w h u l d o 7 h f k q r o r j \ & r / w g 7 ( /? ) $ ;? (m u ? 4? electrical characteristics (curves) breakdow n voltage variation vs. temperature on-resistance variation vs. temperature - 75 -50 - 25 0 25 50 75 10 0 1 25 150 0. 8 0. 9 1. 0 1. 1 1. 2 no t e s ? 1. v g s =0v 2. i d =250 a bv ds s (normalized) t j [] -75 - 50 - 2 5 0 25 50 75 100 125 150 0. 0 0. 5 1. 0 1. 5 2. 0 2. 5 3. 0 no t e s ? 1. v gs =10v 2. i d =1.0a r d s(on) (normalized) t j [ ] maximum safe operating area for jcs2n60f maximum safe operating area for jcs2n60v/r/s/b/c maximum drain current vs. case temperature 1 "sf' r _ h j'1u n?+ $ n-channel mosfet y"n?+ $ $m/t yl$@ ? ?y"?4#"t ? 1 ?>+,]c? 1 r ; l d q j d q 5 r d g 7 ( ' $ 7 l d q m l q & k l q d $ ' '? 7 l d q m l q 0 l f u r ( o h f w u r q l f 0 d w h u l d o 7 h f k q r o r j \ & r / w g 7 ( /? ) $ ;? (m u ? 4? electrical characteristics (curves) transient thermal response curve for jcs2n60v/r/s/b/c transient thermal response curve for jcs2n60f 1 "sf' r _ h j'1u n?+ $ n-channel mosfet y"n?+ $ $m/t yl$@ ? ?y"?4#"t ? 1 ?>+,]c? 1 r ; l d q j d q 5 r d g 7 ( ' $ 7 l d q m l q & k l q d $ ' '? 7 l d q m l q 0 l f u r ( o h f w u r q l f 0 d w h u l d o 7 h f k q r o r j \ & r / w g 7 ( /? ) $ ;? 6 package mechanical data i p a k ) ! unit ? mm 1 "sf' r _ h j'1u n?+ $ n-channel mosfet y"n?+ $ $m/t yl$@ ? ?y"?4#"t ? 1 ?>+,]c? 1 r ; l d q j d q 5 r d g 7 ( ' $ 7 l d q m l q & k l q d $ ' '? 7 l d q m l q 0 l f u r ( o h f w u r q l f 0 d w h u l d o 7 h f k q r o r j \ & r / w g 7 ( /? ) $ ;? 6 package mechanical data ) ! unit ? mm d p a k 1 "sf' r _ h j'1u n?+ $ n-channel mosfet y"n?+ $ $m/t yl$@ ? ?y"?4#"t ? 1 ?>+,]c? 1 r ; l d q j d q 5 r d g 7 ( ' $ 7 l d q m l q & k l q d $ ' '? 7 l d q m l q 0 l f u r ( o h f w u r q l f 0 d w h u l d o 7 h f k q r o r j \ & r / w g 7 ( /? ) $ ;? 6 package mechanical data t o -262 ) ! unit ? mm 1 "sf' r _ h j'1u n?+ $ n-channel mosfet y"n?+ $ $m/t yl$@ ? ?y"?4#"t ? 1 ?>+,]c? 1 r ; l d q j d q 5 r d g 7 ( ' $ 7 l d q m l q & k l q d $ ' '? 7 l d q m l q 0 l f u r ( o h f w u r q l f 0 d w h u l d o 7 h f k q r o r j \ & r / w g 7 ( /? ) $ ;? 6 package mechanical data ) ! unit ? mm t o -263 1 "sf' r _ h j'1u n?+ $ n-channel mosfet y"n?+ $ $m/t yl$@ ? ?y"?4#"t ? 1 ?>+,]c? 1 r ; l d q j d q 5 r d g 7 ( ' $ 7 l d q m l q & k l q d $ ' '? 7 l d q m l q 0 l f u r ( o h f w u r q l f 0 d w h u l d o 7 h f k q r o r j \ & r / w g 7 ( /? ) $ ;? 6 package mechanical data t o -220c ) ! unit ? mm 1 "sf' r _ h j'1u n?+ $ n-channel mosfet y"n?+ $ $m/t yl$@ ? ?y"?4#"t ? 1 ?>+,]c? 1 r ; l d q j d q 5 r d g 7 ( ' $ 7 l d q m l q & k l q d $ ' '? 7 l d q m l q 0 l f u r ( o h f w u r q l f 0 d w h u l d o 7 h f k q r o r j \ & r / w g 7 ( /? ) $ ;? 6 package mechanical data t o -220mf ) ! unit ? mm |
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